Evolution of electrical performance of ZnO-based thin-film transistors by low temperature annealing | Zendy

J. Zhang | Zendy; Xin Li | Zendy; Jiao Lu | Zendy; Pengcheng Wu | Zendy; JungYen Huang | Zendy; Qiang Wang | Zendy; Bin Lu | Zendy; Y. Z. Zhang | Zendy; Bin Zhao | Zendy; Zhiyin Ye | Zendy

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Evolution of electrical performance of ZnO-based thin-film transistors by low temperature annealing

Author(s) -

J. Zhang,

Xin Li,

Jiao Lu,

Pengcheng Wu,

JungYen Huang,

Qiang Wang,

Bin Lu,

Y. Z. Zhang,

Bin Zhao,

Zhiyin Ye

Publication year - 2012

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4711046

Subject(s) - annealing (glass) , materials science , thin film transistor , electrical resistivity and conductivity , threshold voltage , optoelectronics , transistor , thin film , composite material , voltage , nanotechnology , layer (electronics) , electrical engineering , engineering

The effects of post-annealing on performance of ZnO-based thin-film transistors (TFTs) fabricated at room temperature were investigated. It was observed that high-temperature annealing resulted in a large decrease in resistivity of the ZnO channel layer and caused a large off-state current for ZnO TFTs, while low-temperature annealing had little effect on the off-state current. The evolution of electrical performance of ZnO TFTs annealed at a lower temperature showed that the threshold voltage decreased greatly and the sub-threshold slope improved evidently without great change of the resistivity of the ZnO channel as the annealing time prolonged. The possible mechanism is that the traps have been removed without activating the donor defects in the ZnO channel layer

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