Open AccessThe systematic study and simulation modeling on nano-level dislocation edge stress effects
Author(s) -
M.-H. Liao,
C.-H. Chen,
LiChiu Chang,
Yang Chen
Publication year - 2012
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4706565
Subject(s) - materials science , dislocation , stress (linguistics) , stress relaxation , stress field , enhanced data rates for gsm evolution , peierls stress , transistor , condensed matter physics , dislocation creep , composite material , finite element method , creep , structural engineering , physics , computer science , voltage , telecommunications , philosophy , linguistics , quantum mechanics , engineering
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