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Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin films
Author(s) -
Anas Abutaha,
S. R. Sarath Kumar,
Husam N. Alshareef
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4704183
Subject(s) - fluence , pulsed laser deposition , materials science , thin film , epitaxy , laser , optoelectronics , thermoelectric effect , doping , seebeck coefficient , effective mass (spring–mass system) , oxide , analytical chemistry (journal) , optics , chemistry , nanotechnology , layer (electronics) , thermal conductivity , composite material , physics , quantum mechanics , chromatography , metallurgy , thermodynamics
The effect of the laser fluence on high temperature thermoelectric properties of the La doped SrTiO3 (SLTO) thin films epitaxially grown on LaAlO3 〈100〉 substrates by pulsed laser deposition is clarified. It is shown that oxygen vacancies that influence the effective mass of carriers in SLTO films can be tuned by varying the laser energy. The highest power factor of 0.433 W K−1 m−1 has been achieved at 636 K for a filmdeposited using the highest laser fluence of 7 J cm−2 pulse−1

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