Emission channeling studies of Pr in GaN | Zendy

U. Wahl | Zendy; A. Vantomme | Zendy; G. Langouche | Zendy; João P. Araújo | Zendy; L. Peralta | Zendy; J. G. Correia | Zendy

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Emission channeling studies of Pr in GaN

Author(s) -

U. Wahl,

A. Vantomme,

G. Langouche,

João P. Araújo,

L. Peralta,

J. G. Correia

Publication year - 2000

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.373820

Subject(s) - annealing (glass) , isotope , materials science , hexagonal crystal system , wide bandgap semiconductor , electron , radiochemistry , lattice (music) , thin film , detector , analytical chemistry (journal) , optoelectronics , crystallography , chemistry , nanotechnology , physics , optics , nuclear physics , chromatography , acoustics , composite material

We report on the lattice location of Pr in thin film, single-crystalline hexagonal GaN using the emission channeling technique. The angular distribution of $\beta^{-}$-particles emitted by the radioactive isotope $^{143}$Pr was monitored by a position-sensitive electron detector following 60 keV room temperature implantation of the precursor isotope $^{143}$Cs at a dose of 1 $\times 10^{13}$ cm$^{-2}$ and annealing up to 900°C. Our experiments provide direct evidence that Pr is thermally stable at substitutional Ga sites

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