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Domain structure and magnetotransport in epitaxial colossal magnetoresistance thin films
Author(s) -
Y. Suzuki,
Yan Wu,
Jia Yu,
U. Ruediger,
Andrew D. Kent,
T. K. Nath,
ChangBeom Eom
Publication year - 2000
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.372828
Subject(s) - magnetoresistance , condensed matter physics , colossal magnetoresistance , materials science , magnetization , diffraction , thin film , giant magnetoresistance , domain wall (magnetism) , epitaxy , strain (injury) , composite material , optics , physics , magnetic field , nanotechnology , layer (electronics) , quantum mechanics , medicine
Our studies of compressively strained La0.7Sr0.3MnO7 (LSMO) thin films reveal the importance of domain structure and strain effects in the magnetization reversal and magnetotransport. Normal and grazing incidence x-ray diffraction indicate that the compressive strain on these LSMO thin films on (100) LaAlO3 is not completely relaxed up to thicknesses on the order of 1000 A. The effect of the compressive strain is evident in the shape of the magnetization loops and the magnetotransport measurements at various temperatures. Although the domain wall contribution to the magnetoresistance is significantly larger than that predicted from a simple double exchange picture, the contribution is a small fraction of the measured magnetoresistance.

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