Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing | Zendy

J.R. Jensen | Zendy; J. M. Hvam | Zendy; W. Langbein | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing

Author(s) -

J.R. Jensen,

J. M. Hvam,

W. Langbein

Publication year - 1999

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.371096

Subject(s) - photoluminescence , molecular beam epitaxy , quantum well , condensed matter physics , substrate (aquarium) , materials science , luminescence , gallium arsenide , band gap , bowing , epitaxy , optoelectronics , optics , physics , nanotechnology , laser , geology , philosophy , oceanography , theology , layer (electronics)

Knowledge of the quaternary InAlGaAs material system is very limited for the composition range relevant for growth on GaAs substrates. We report on the characterization and modeling of InAlGaAs quantum wells with AlGaAs barriers, grown pseudomorphically on a GaAs substrate with molecular beam epitaxy. The quantum wells are characterized with photoluminescence, and the measured transition energies are modeled taking into account the influence of In segregation on the shape of the well potential. From the modeling we deduce a relation for the low temperature band gap of unstrained Inx(AlyGa1−y)1−xAs, for 0⩽x,y⩽0.20. The measured linewidths of the luminescence peaks are in agreement with the broadening expected from random alloy fluctuations and well width fluctuations with an effective interface roughness of 1.1 ML.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research