Scanning tunneling spectroscopy study of erbium doped GaSb crystals | Zendy

P. Hidalgo | Zendy; Bianchi Méndez | Zendy; J. Piqueras | Zendy; J. Plaza | Zendy; E. Diéguez | Zendy

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Scanning tunneling spectroscopy study of erbium doped GaSb crystals

Author(s) -

P. Hidalgo,

Bianchi Méndez,

J. Piqueras,

J. Plaza,

E. Diéguez

Publication year - 1999

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.370910

Subject(s) - cathodoluminescence , scanning tunneling spectroscopy , scanning electron microscope , scanning tunneling microscope , doping , materials science , spectroscopy , band gap , quantum tunnelling , condensed matter physics , analytical chemistry (journal) , optoelectronics , chemistry , luminescence , nanotechnology , physics , quantum mechanics , composite material , chromatography

Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope-scanning tunnelling microscope system. The surface band gap in doped samples has been found to be about 0.5 eV while in undoped crystals the gap is close to the bulk value. Inhomogeneities in the local electronic properties of the doped crystals are studied by a correlation of the CL images and STS data

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