Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells | Zendy

Weijie Du | Zendy; Mitsushi Suzuno | Zendy; M. Ajmal Khan | Zendy; Katsuaki Toh | Zendy; Masakazu Baba | Zendy; Kotaro Nakamura | Zendy; Kaoru Toko | Zendy; Noritaka Usami | Zendy; Takashi Suemasu | Zendy

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Improved photoresponsivity of semiconducting BaSi₂ epitaxial films grown on a tunnel junction for thin-film solar cells

Author(s) -

Weijie Du,

Mitsushi Suzuno,

M. Ajmal Khan,

Katsuaki Toh,

Masakazu Baba,

Kotaro Nakamura,

Kaoru Toko,

Noritaka Usami,

Takashi Suemasu

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3703585

Subject(s) - icon , citation , epitaxy , download , computer science , online search , information retrieval , world wide web , materials science , physics , nanotechnology , layer (electronics) , programming language

The highest photoresponsivity and an internal quantum efficiency exceeding 70% at 1.55 eV were achieved for 400 nm thick undoped n-type BaSi2 epitaxial layers formed on a n+-BaSi2/p+-Si tunnel junction (TJ) on Si(111). The diffusion of Sb atoms was effectively suppressed by an intermediate polycrystalline Si layer grown by solid phase epitaxy, located between the TJ and undoped BaSi2 layers

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