Open AccessGate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition
Author(s) -
Christopher L. Hinkle,
Rohit Galatage,
R. A. Chapman,
Eric M. Vogel,
Husam N. Alshareef,
C. M. Freeman,
Mikael Christensen,
E. Wimmer,
H. Niimi,
A. Li-Fatou,
J. B. Shaw,
James J. Chambers
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3701165
Subject(s) - nmos logic , pmos logic , materials science , tin , cladding (metalworking) , forming gas , annealing (glass) , metal gate , mosfet , optoelectronics , oxide , silicon , gate oxide , metallurgy , voltage , electrical engineering , transistor , engineering
Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt
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