Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain | Zendy

C. Robert | Zendy; Mathieu Perrin | Zendy; Charles Cornet | Zendy; Jacky Even | Zendy; JeanMarc Jancu | Zendy

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Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain

Author(s) -

C. Robert,

Mathieu Perrin,

Charles Cornet,

Jacky Even,

JeanMarc Jancu

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3694028

Subject(s) - quantum well , tight binding , materials science , band gap , electronic band structure , silicon , substrate (aquarium) , electronic structure , molecular physics , laser , condensed matter physics , optoelectronics , chemistry , optics , physics , oceanography , geology

International audienceBand structure calculations of strained Ga(NAsP) quantum wells are performed within the framework of the extended-basis sp3d5s* tight-binding model. The nitrogen contribution is taken into account by introducing an additional sN orbital into the tight-binding basis. Biaxial strain effects on the band alignment of bulk Ga(NAsP) is studied for the ultra-diluted regime. We demonstrate a good agreement with experimental data both for transition energies and optical gain in Ga(NAsP) quantum wells. The effect of N incorporation in the laser active areas is simulated

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