Electron drift-mobility measurements in polycrystalline CuIn1−xGaxSe2 solar cells | Zendy

Steluta Dinca | Zendy; E. A. Schiff | Zendy; William N. Shafarman | Zendy; Brian Egaas | Zendy; R. Noufi | Zendy; David L. Young | Zendy

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Electron drift-mobility measurements in polycrystalline CuIn1−xGaxSe2 solar cells

Author(s) -

Steluta Dinca,

E. A. Schiff,

William N. Shafarman,

Brian Egaas,

R. Noufi,

David L. Young

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3692165

Subject(s) - electron mobility , crystallite , electron , materials science , solar cell , mobilities , range (aeronautics) , hall effect , condensed matter physics , analytical chemistry (journal) , optoelectronics , electrical resistivity and conductivity , chemistry , physics , composite material , metallurgy , social science , chromatography , quantum mechanics , sociology

We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn1−xGaxSe2 films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm2/Vs and are weakly temperature-dependent from 100–300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm2/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

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