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The paper presents the results of investigation the process of formation of the ordered microstructures of dislocations in the near-surface layer a single-crystal plate of silicon under the action of pulsed laser radiation with microstructured distribution intensity. It has been found that generation of the ordered one-dimensional microstructures of dislocations takes place. The period of these ordered microstructures is d≈3÷4 μm. A combination of one-dimensional structures of dislocations produces ordered two-dimensional structure of dislocations

aip advances

Formation of ordered one-dimensional microstructures of dislocations in near-surface layer of semiconductor, under laser radiation with microstructured distribution of intensity