Formation of ordered one-dimensional microstructures of dislocations in near-surface layer of semiconductor, under laser radiation with microstructured distribution of intensity | Zendy

А. F. Banishev | Zendy; А. А. Банишев | Zendy

Open Access

Formation of ordered one-dimensional microstructures of dislocations in near-surface layer of semiconductor, under laser radiation with microstructured distribution of intensity

Author(s) -

А. F. Banishev,

А. А. Банишев

Publication year - 2012

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.3692072

Subject(s) - materials science , microstructure , silicon , dislocation , laser , intensity (physics) , semiconductor , optics , condensed matter physics , layer (electronics) , radiation , surface layer , crystallography , optoelectronics , composite material , chemistry , physics

The paper presents the results of investigation the process of formation of the ordered microstructures of dislocations in the near-surface layer a single-crystal plate of silicon under the action of pulsed laser radiation with microstructured distribution intensity. It has been found that generation of the ordered one-dimensional microstructures of dislocations takes place. The period of these ordered microstructures is d≈3÷4 μm. A combination of one-dimensional structures of dislocations produces ordered two-dimensional structure of dislocations

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