In 0.5 Ga 0.5 As quantum dot intermixing and evaporation in GaAs capping layer growth | Zendy

Jeong-Sik Lee | Zendy; Hongwen Ren | Zendy; S. Sugou | Zendy; Yasuaki Masumoto | Zendy

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In 0.5 Ga 0.5 As quantum dot intermixing and evaporation in GaAs capping layer growth

Author(s) -

Jeong-Sik Lee,

Hongwen Ren,

S. Sugou,

Yasuaki Masumoto

Publication year - 1998

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.369045

Subject(s) - quantum dot , photoluminescence , materials science , layer (electronics) , gallium arsenide , epitaxy , impact crater , condensed matter physics , metalorganic vapour phase epitaxy , evaporation , spectral line , anisotropy , optoelectronics , nanotechnology , physics , optics , astronomy , thermodynamics

Our study of GaAs growth over self-assembled In0.5Ga0.5As quantum dots grown by metalorganic vapor-phase epitaxy showed that GaAs capping layer surface morphology at the onset strongly depended on temperature. Incompletely capped In0.5Ga0.5As islands were elongated toward [110], indicating anisotropy in intermixing. During higher-temperature growth interruption, islands show craters in quantum dot centers. Craters become hexagonal holes whose depth matches GaAs capping layer thickness. Postannealing photoluminescence spectra show no peak corresponding to overly large quantum dot radiation, indicating that growth interruption after capping layer formation at a certain thickness eliminates overly large quantum dots

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