English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Lattice mismatch in layered semiconductor structures with submicron lengthscales leads to extremely high nonuniform strains. This paper presents a finiteelement technique for incorporating the effects of the nonuniform strain intoan analysis of the electronic properties of SiGe quantum structures. Strainfields are calculated using a standard structural mechanics finite elementpackage and the effects are included as a nonuniform potential directly in thetime independent Schrodinger equation; a k-p Hamiltonian is used to model theeffects of multiple valence subband coupling. A variational statement of theequation is formulated and solved using the finite element method. Thistechnique is applied to resonant tunneling diode quantum dots and wires; theresulting densities of states confined to the quantum well layers of thedevices are compared to experimental current-voltage I(V) curves.Comment: 17 pages (LaTex), 18 figures (JPEG), submitted to Journal of Applied  Physic

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires