Open AccessFinite element analysis of strain effects on electronic and transport properties in quantum dots and wires
Author(s) -
Harley T. Johnson,
L. B. Freund,
C. D. Akyüz,
A. Zaslavsky
Publication year - 1998
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.368549
Subject(s) - quantum dot , condensed matter physics , quantum tunnelling , heterojunction , electronic structure , valence (chemistry) , materials science , infinitesimal strain theory , quantum wire , quantum well , quantum , finite element method , physics , quantum mechanics , nanotechnology , thermodynamics , laser
Lattice mismatch in layered semiconductor structures with submicron lengthscales leads to extremely high nonuniform strains. This paper presents a finiteelement technique for incorporating the effects of the nonuniform strain intoan analysis of the electronic properties of SiGe quantum structures. Strainfields are calculated using a standard structural mechanics finite elementpackage and the effects are included as a nonuniform potential directly in thetime independent Schrodinger equation; a k-p Hamiltonian is used to model theeffects of multiple valence subband coupling. A variational statement of theequation is formulated and solved using the finite element method. Thistechnique is applied to resonant tunneling diode quantum dots and wires; theresulting densities of states confined to the quantum well layers of thedevices are compared to experimental current-voltage I(V) curves.Comment: 17 pages (LaTex), 18 figures (JPEG), submitted to Journal of Applied Physic
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