Properties of InxGa1−xN films in terahertz range | Zendy

A. Gauthier-Brun | Zendy; Jinghua Teng | Zendy; El Hadj Dogheche | Zendy; W. Liu | Zendy; Anisha Gokarna | Zendy; Masayoshi Tonouchi | Zendy; S. J. Chua | Zendy; D. Décoster | Zendy

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Properties of InxGa1−xN films in terahertz range

Author(s) -

A. Gauthier-Brun,

Jinghua Teng,

El Hadj Dogheche,

W. Liu,

Anisha Gokarna,

Masayoshi Tonouchi,

S. J. Chua,

D. Décoster

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3684836

Subject(s) - terahertz radiation , materials science , chemical vapor deposition , refractive index , terahertz spectroscopy and technology , indium , optoelectronics , thin film , characterization (materials science) , spectroscopy , metalorganic vapour phase epitaxy , deposition (geology) , electron mobility , analytical chemistry (journal) , wide bandgap semiconductor , chemistry , nanotechnology , layer (electronics) , physics , paleontology , epitaxy , quantum mechanics , chromatography , sediment , biology

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