Spin-inversion in nanoscale graphene sheets with a Rashba spin-orbit barrier
Author(s) -
Somaieh Ahmadi,
Mahdi Esmaeilzadeh,
Esmaeil Namvar,
Genhua Pan
Publication year - 2012
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.3684600
Subject(s) - spintronics , graphene , condensed matter physics , spin–orbit interaction , rashba effect , spin polarization , electron , spin hall effect , spin (aerodynamics) , spinplasmonics , materials science , physics , ferromagnetism , nanotechnology , quantum mechanics , thermodynamics
Spin-inversion properties of an electron in nanoscale graphene sheets with a Rashba spin-orbit barrier is studied using transfer matrix method. It is found that for proper values of Rashba spin-orbit strength, perfect spin-inversion can occur in a wide range of electron incident angle near the normal incident. In this case, the graphene sheet with Rashba spin-orbit barrier can be considered as an electron spin-inverter. The efficiency of spin-inverter can increase up to a very high value by increasing the length of Rashba spin-orbit barrier. The effect of intrinsic spin-orbit interaction on electron spin inversion is then studied. It is shown that the efficiency of spin-inverter decreases slightly in the presence of intrinsic spin-orbit interaction. The present study can be used to design graphene-based spintronic devices
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