Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron | Zendy

Maxime Forster | Zendy; Erwann Fourmond | Zendy; Fiacre Rougieux | Zendy; A. Cuevas | Zendy; Raira Gotoh | Zendy; Kozo Fujiwara | Zendy; Satoshi Uda | Zendy; M. Lemiti | Zendy

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Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

Author(s) -

Maxime Forster,

Erwann Fourmond,

Fiacre Rougieux,

A. Cuevas,

Raira Gotoh,

Kozo Fujiwara,

Satoshi Uda,

M. Lemiti

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3680205

Subject(s) - boron , gallium , silicon , materials science , doping , oxygen , trapping , diffusion , analytical chemistry (journal) , chemistry , optoelectronics , metallurgy , thermodynamics , physics , organic chemistry , chromatography , ecology , biology

We study the boron-oxygen defect in Si co-doped with gallium and boron with the hole density 10 times higher than the boron concentration. Instead of the linear dependence of the defect density on the hole density observed in boron and phosphorus compensated silicon, we find a proportionality to the boron concentration. This indicates the participation of substitutional, rather than interstitial, boron in the defect complex. The measured defect formation rate constant is

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