Open AccessPublisher’s Note: “Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors” [J. Appl. Phys. 93, 10046 (2003)]
Author(s) -
R. P. Joshi,
Viswanadham Sridhara,
B. Jogai,
Pankaj B. Shah,
R. D. del Rosario
Publication year - 2012
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3679426
Subject(s) - dislocation , electron mobility , induced high electron mobility transistor , electron , transistor , scattering , condensed matter physics , materials science , optoelectronics , physics , high electron mobility transistor , optics , quantum mechanics , voltage
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