Publisher’s Note: “Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors” [J. Appl. Phys. 93, 10046 (2003)] | Zendy

AI Assistant Blog Pricing

Publisher’s Note: “Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors” [J. Appl. Phys. 93, 10046 (2003)]

Details

The content you want is available to Zendy users.Already have an account? Click here. to sign in.