Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage | Zendy

Ye Tian | Zendy; Chuan Fei Guo | Zendy; Shengming Guo | Zendy; Yongsheng Wang | Zendy; Junjie Miao | Zendy; Qi Wang | Zendy; Qian Liu | Zendy

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Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage

Author(s) -

Ye Tian,

Chuan Fei Guo,

Shengming Guo,

Yongsheng Wang,

Junjie Miao,

Qi Wang,

Qian Liu

Publication year - 2012

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.3679086

Subject(s) - ohmic contact , nanowire , materials science , bismuth , optoelectronics , bismuth telluride , sputter deposition , contact resistance , nanotechnology , faceting , sputtering , thin film , electronic engineering , composite material , metallurgy , crystallography , chemistry , thermoelectric materials , layer (electronics) , thermal conductivity , engineering

High quality bismuth (Bi) nanowire and its ohmic contact free of interface damage are quite desired for its research and application. In this paper, we propose one new way to prepare high-quality single crystal Bi nanowires at a low deposition rate, by magnetron sputtering method without the assistance of template or catalyst. The slow deposition growth mechanism of Bi nanowire is successfully explained by an anisotropic corner crossing effect, which is very different from existing explanations. A novel approach free of interface damage to ohmic contact of Bi nanowire is proposed and its good electrical conductivity is confirmed by I-V characteristic measurement. Our method provides a quick and convenient way to produce high-quality Bi nanowires and construct ohmic contact for desirable devices

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