Open AccessModeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry
Author(s) -
S. R. Sarath Kumar,
Anas Abutaha,
Mohamed Nejib Hedhili,
Husam N. Alshareef
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3678186
Subject(s) - seebeck coefficient , thermoelectric effect , ellipsometry , materials science , electrical resistivity and conductivity , thin film , annealing (glass) , epitaxy , analytical chemistry (journal) , thermoelectric materials , oxide , thermal conductivity , nanotechnology , chemistry , layer (electronics) , composite material , metallurgy , thermodynamics , physics , engineering , chromatography , electrical engineering
The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics
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