Ohmic contacts to n-type germanium with low specific contact resistivity | Zendy

Kevin Gallacher | Zendy; Philippe Velha | Zendy; Douglas J. Paul | Zendy; Ian MacLaren | Zendy; M. Myronov | Zendy; D. R. Leadley | Zendy

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Ohmic contacts to n-type germanium with low specific contact resistivity

Author(s) -

Kevin Gallacher,

Philippe Velha,

Douglas J. Paul,

Ian MacLaren,

M. Myronov,

D. R. Leadley

Publication year - 2012

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3676667

Subject(s) - ohmic contact , germanium , electrical resistivity and conductivity , materials science , transmission electron microscopy , contact resistance , quantum tunnelling , schottky barrier , alloy , metallurgy , condensed matter physics , nanotechnology , optoelectronics , silicon , electrical engineering , diode , physics , engineering , layer (electronics)

A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 Â± 1.8) Ã\u97 10 -7 Î©-cm 2 for anneal temperatures of 340 Â°C. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge. Â© 2012 American Institute of Physics

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