Open AccessImprovement of temperature-stability in a quantum well laser with asymmetric barrier layers
Author(s) -
A. E. Zhukov,
N. V. Kryzhanovskaya,
F. I. Zubov,
Yuri M. Shernyakov,
M. V. Maximov,
Elizaveta Semenova,
Kresten Yvind,
Levon V. Asryan
Publication year - 2012
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3676085
Subject(s) - laser , materials science , quantum well , quantum dot laser , barrier layer , optoelectronics , current density , current (fluid) , semiconductor laser theory , layer (electronics) , optics , semiconductor , nanotechnology , physics , thermodynamics , quantum mechanics
We fabricated and tested a quantum well laser with asymmetric barrier layers. Such a laser has been proposed earlier to suppress bipolar carrier population in the optical confinement layer and thus to improve temperature-stability of the threshold current. As compared to the conventional reference laser structure, our laser with asymmetric barrier layers demonstrates reduced internal optical loss, lower threshold current density at elevated temperatures, and higher characteristic temperature (143 vs. 99 K at 20 °C).
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom