Simulation of multilevel switching in electrochemical metallization memory cells | Zendy

Stephan Menzel | Zendy; U. Böttger | Zendy; Rainer Waser | Zendy

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Simulation of multilevel switching in electrochemical metallization memory cells

Author(s) -

Stephan Menzel,

U. Böttger,

Rainer Waser

Publication year - 2012

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3673239

Subject(s) - resistive random access memory , protein filament , materials science , electrochemistry , electrode , dissolution , non volatile memory , quantum tunnelling , optoelectronics , nanotechnology , chemistry , composite material

We report on a simulation model for bipolar resistive switching in cation-migration based memristive devices. The model is based on the electrochemical driven growth and dissolution of a metallic filament. The origin of multilevel switching is proposed to be direct tunneling between the growing filament and the counter electrode. An important result of our parameter simulation studies is that different materials show the same experimental multilevel behavior. Our model fully reproduces the experimental data and allows for an explanation of the transition from bipolar to nonpolar switching. (C) 2012 American Institute of Physics. [doi:10.1063/1.3673239

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