Open AccessReply to “Comment on ‘Amorphization and defect recombination in ion implanted silicon carbide’ ” [J. Appl. Phys. 83, 3935 (1998)]
Author(s) -
Maria Grazia Grimaldi,
L. Calcagno
Publication year - 1998
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.367315
Subject(s) - silicon carbide , materials science , ion implantation , silicon , atomic physics , ion , displacement (psychology) , carbide , ion beam , chemistry , physics , optoelectronics , metallurgy , organic chemistry , psychology , psychotherapist
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