Delayed switching applied to memristor neural networks
Author(s) -
Frank Z. Wang,
Na Helian,
Sining Wu,
Xiao Yang,
Yike Guo,
Guan Lim,
Md. Mamunur Rashid
Publication year - 2012
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3672409
Subject(s) - memristor , hebbian theory , artificial neural network , physical neural network , memistor , computer science , synapse , inertia , switching time , topology (electrical circuits) , control theory (sociology) , physics , electronic engineering , voltage , electrical engineering , neuroscience , control (management) , artificial intelligence , resistive random access memory , engineering , types of artificial neural networks , optoelectronics , recurrent neural network , quantum mechanics , biology
Magnetic flux and electric charge are linked in a memristor. We reported recently that a memristor has a peculiar effect in which the switching takes place with a time delay because a memristor possesses a certain inertia. This effect was named the ¡°delayed switching effect.¡± In this work, we elaborate on the importance of delayed switching in a brain-like computer using memristor neural networks. The effect is used to control the switching of a memristor synapse between two neurons that fire together (the Hebbian rule). A theoretical formula is found, and the design is verified by a simulation. We have also built an experimental setup consisting of electronic memristive synapses and electronic neurons
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