Open AccessExtension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
Author(s) -
O. M. Bulashenko,
Gabriel Gomila,
J. M. Rubı́,
V. A. Kochelap
Publication year - 1998
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.367023
Subject(s) - diode , noise (video) , schottky barrier , schottky diode , semiconductor , semiconductor device , optoelectronics , electrical impedance , space charge , field (mathematics) , diffusion , materials science , depletion region , electric field , diffusion current , charge carrier , metal–semiconductor junction , current (fluid) , computational physics , physics , computer science , mathematics , nanotechnology , quantum mechanics , layer (electronics) , artificial intelligence , pure mathematics , image (mathematics) , thermodynamics , electron
We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentratio
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