Low-operating voltage and stable organic field-effect transistors with poly (methyl methacrylate) gate dielectric solution deposited from a high dipole moment solvent | Zendy

N.B. Ukah | Zendy; Jimmy Granström | Zendy; Raghavendar Reddy Sanganna Gari | Zendy; Gavin M. King | Zendy; S. Guha | Zendy

Open Access

Low-operating voltage and stable organic field-effect transistors with poly (methyl methacrylate) gate dielectric solution deposited from a high dipole moment solvent

Author(s) -

N.B. Ukah,

Jimmy Granström,

Raghavendar Reddy Sanganna Gari,

Gavin M. King,

S. Guha

Publication year - 2011

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3669696

Subject(s) - materials science , pentacene , dielectric , gate dielectric , threshold voltage , dipole , field effect transistor , high κ dielectric , optoelectronics , organic field effect transistor , hysteresis , propylene carbonate , transistor , analytical chemistry (journal) , thin film transistor , electrode , voltage , condensed matter physics , layer (electronics) , electrical engineering , chemistry , nanotechnology , electrolyte , organic chemistry , physics , engineering

A low-operating voltage and stable pentacene field-effect transistor (FET) employing thin low-dielectric constant gate layer of poly (methyl methacrylate) (PMMA) dissolved in propylene carbonate (PC) has been realized. This device exhibiting high field-effect mobility, a threshold voltage of −1 V, and a small sub-threshold slope at operating voltages below −3 V is compared with an FET cast from PMMA film dissolved in a low dipole moment solvent. The negligible hysteresis and excellent electrical stability of FETs under gate bias stress with the use of PC are traceable to the low density of trap states in PMMA bulk and at the interfaces.

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