Deep energy levels in CdTe and CdZnTe | Zendy

A. Castaldini | Zendy; A. Cavallini | Zendy; Beatrice Fraboni | Zendy; Paloma Fernández | Zendy; J. Piqueras | Zendy

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Deep energy levels in CdTe and CdZnTe

Author(s) -

A. Castaldini,

A. Cavallini,

Beatrice Fraboni,

Paloma Fernández,

J. Piqueras

Publication year - 1998

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.366946

Subject(s) - cathodoluminescence , deep level transient spectroscopy , cadmium telluride photovoltaics , materials science , spectroscopy , optoelectronics , electron , physics , silicon , luminescence , quantum mechanics

The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy, and photo-DLTS. The latter two methods, which can be applied to semi-insulating materials, allow to characterize the deep traps located up to midgap and can determine whether they are hole or electron traps. We have identified 12 different traps, some common to all the investigated samples, some peculiar to one of them. A comparison of the results obtained from the various materials is given and the status of defect models is reviewed

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