Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells | Zendy

Shu Yuan | Zendy; Yong Yook Kim | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy; P. T. Burke | Zendy; Lap Van Dao | Zendy; M. Ga�l | Zendy; Michael Chan | Zendy; E. H. Li | Zendy; Jin Zou | Zendy; D. Q. Cai | Zendy; D. J. H. Cockayne | Zendy; R. M. Cohen | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells

Author(s) -

Shu Yuan,

Yong Yook Kim,

Hark Hoe Tan,

C. Jagadish,

P. T. Burke,

Lap Van Dao,

M. Ga�l,

Michael Chan,

E. H. Li,

Jin Zou,

D. Q. Cai,

D. J. H. Cockayne,

R. M. Cohen

Publication year - 1998

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.366830

Subject(s) - quantum well , photoluminescence , materials science , transmission electron microscopy , oxide , condensed matter physics , anode , gallium arsenide , optoelectronics , chemistry , nanotechnology , metallurgy , optics , physics , electrode , laser

Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photoluminescence, transmission electron microscopy, and quantum well modeling were used to understand the effects of intermixing on the quantum well shape. Residual water in the oxide was found to increase the intermixing, though it was not the prime cause for intermixing. Injection of defects such as group III vacancies or interstitials was considered to be a driving force for the intermixing. Different current densities used in the experimental range to create anodic oxides had little effect on the intermixing. ©1998 American Institute of Physics.published_or_final_versio

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research