Luminescence from growth topographic features in GaN:Si films | Zendy

Manuel Herrera | Zendy; Paloma Fernández | Zendy; Javier Piqueras | Zendy

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Luminescence from growth topographic features in GaN:Si films

Author(s) -

Manuel Herrera,

Paloma Fernández,

Javier Piqueras

Publication year - 1998

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.366661

Subject(s) - cathodoluminescence , hillock , luminescence , scanning electron microscope , materials science , crystallographic defect , impurity , optics , optoelectronics , chemistry , crystallography , physics , organic chemistry , composite material

Cathodoluminescence (CL) in the scanning electron microscope is used to investigate the nature of defects responsible for the luminescence associated with round and hexagonal-like topographic features of GaN:Si films. Round hillocks of the size of a few microns, which sometimes have a nanopipe related central hole, do not influence the luminescence emission of the film. Hillocks with sizes of several tens of microns show a marked CL contrast at the center and at the border. The origin of the observed contrast is attributed to a growth induced inhomogeneous distribution of point defects and impurities. Radiation with the electron beam of the scanning microscope causes a decrease of the CL intensity without spectral changes

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