Open AccessAnomalously high thermoelectric power factor in epitaxial ScN thin films
Author(s) -
Sit Kerdsongpanya,
Ngo Van g,
Nini Pryds,
Agnė Žukauskaitė,
Jens Jensen,
Jens Birch,
Jun Lu,
Lars Hultman,
Gunilla Wingqvist,
Per Eklund
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3665945
Subject(s) - seebeck coefficient , thin film , materials science , electrical resistivity and conductivity , thermoelectric effect , elastic recoil detection , wafer , analytical chemistry (journal) , sputter deposition , epitaxy , stoichiometry , sputtering , condensed matter physics , optoelectronics , chemistry , nanotechnology , composite material , thermal conductivity , layer (electronics) , physics , engineering , chromatography , electrical engineering , thermodynamics
Thermoelectric properties of ScN thin films grown by reactive magnetron sputtering on Al2O3(0001) wafers are reported. X-ray diffraction and elastic recoil detection analyses show that the composition of the films is close to stoichiometry with trace amounts (similar to 1 at. % in total) of C, O, and F. We found that the ScN thin-film exhibits a rather low electrical resistivity of similar to 2.94 mu Omega m, while its Seebeck coefficient is approximately similar to-86 mu V/K at 800 K, yielding a power factor of similar to 2.5 x 10(-3) W/mK(2). This value is anomalously high for common transition-metal nitrides.Funding Agencies|Swedish Research Council (VR)|621-2009-5258
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