Domain matching epitaxy of ferrimagnetic CoFe2O4 thin films on Sc2O3/Si(111) | Zendy

F. Sánchez | Zendy; Romain Bachelet | Zendy; Patricia de Coux | Zendy; B. Warot-Fonrose | Zendy; V. Skumryev | Zendy; L. Tarnawska | Zendy; P. Zaumseil | Zendy; Thomas Schroeder | Zendy; J. Fontcuberta | Zendy

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Domain matching epitaxy of ferrimagnetic CoFe2O4 thin films on Sc2O3/Si(111)

Author(s) -

F. Sánchez,

Romain Bachelet,

Patricia de Coux,

B. Warot-Fonrose,

V. Skumryev,

L. Tarnawska,

P. Zaumseil,

Thomas Schroeder,

J. Fontcuberta

Publication year - 2011

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3663216

Subject(s) - ferrimagnetism , spinel , epitaxy , materials science , oxide , thin film , condensed matter physics , single crystal , magnetization , crystallography , nanotechnology , metallurgy , chemistry , layer (electronics) , physics , quantum mechanics , magnetic field

This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.Ferrimagnetic spinel CoFe2O4 (CFO) films are integrated with Si(111) using Sc2O3 buffer layers. The huge lattice mismatch (17%) between CFO and Sc2O3 is accommodated by domain matching, and CFO grows epitaxially with (111) out-of-plane orientation and coexistence of A- and B-type in-plane crystal variants. CFO films have low roughness of 4 Å and saturation magnetization of about 300 emu/cm3. These properties make CFO films on Sc2O3-buffered Si(111) comparable to those grown on oxide single crystals and thus extend the possibilities of using spinel oxides in electronic devices

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