Two-dimensional electron gas related emissions in ZnMgO/ZnO heterostructures | Zendy

Hui Chen | Zendy; Shulin Gu | Zendy; Jiagao Liu | Zendy; Jian Dong Ye | Zendy; Kun Tang | Zendy; Shunming Zhu | Zendy; Youdou Zheng | Zendy

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Two-dimensional electron gas related emissions in ZnMgO/ZnO heterostructures

Author(s) -

Hui Chen,

Shulin Gu,

Jiagao Liu,

Jian Dong Ye,

Kun Tang,

Shunming Zhu,

Youdou Zheng

Publication year - 2011

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3662964

Subject(s) - heterojunction , exciton , materials science , chemical vapor deposition , fermi gas , electron , wide bandgap semiconductor , polarization (electrochemistry) , condensed matter physics , optoelectronics , chemistry , physics , quantum mechanics

Radiative recombination of two-dimensional electron gas (2DEG), induced by polarization and validated by Hall effect measurements, is investigated in ZnMgO/ZnO heterostructures grown by metal-organic chemical vapor deposition. The Mg composition, the depth profile distribution of Mg, the residual strain in ZnMgO caplayer, and the thickness of caplayer all significantly influence the 2DEG-related transitions in ZnMgO/ZnO heterostructures. Below or above ZnO donor bound exciton, three additional broad emissions persisting up to 100 K are assigned to the spatially indirect transitions from 2DEG electrons to the photoexcited holes towards the ZnO flat-band region or remaining at the heterointerface. © 2011 American Institute of Physics.

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