4f -shell configuration of Yb in InP studied by electron spin resonance | Zendy

Takamitsu Ishiyama | Zendy; K. Murakami | Zendy; K. Takahei | Zendy; A. Taguchi | Zendy

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4f -shell configuration of Yb in InP studied by electron spin resonance

Author(s) -

Takamitsu Ishiyama,

K. Murakami,

K. Takahei,

A. Taguchi

Publication year - 1997

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.366176

Subject(s) - electron paramagnetic resonance , ion , ytterbium , epitaxy , doping , chemical vapor deposition , resonance (particle physics) , electron , spectral line , materials science , analytical chemistry (journal) , chemistry , atomic physics , nuclear magnetic resonance , nanotechnology , physics , organic chemistry , layer (electronics) , quantum mechanics , chromatography , optoelectronics , astronomy

We have performed electron spin resonance (ESR) measurements on Yb-doped n-type and p-type InP layers epitaxially grown by metalorganic chemical vapor deposition. ESR spectra of Yb3 + (4f13) were observed in both n-type and p-type samples. However, the ESR intensity of Yb3 + (4f13) for n-type samples was found to be much lower than that for p-type samples. This suggests that most Yb ions in Yb-doped n-type InP are in the Yb2 + (4f14) state rather than in the Yb3 + (4f13) state. Thus an electron captured by the trap level formed by Yb in the band gap of InP is not located outside the Yb 4f shell as reported previously, but accommodated in the Yb 4f shell

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