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We have studied the temperature dependence of the photoluminescence of a single layer of InAs/InP(001) self-assembledquantum wires emitting at 1.5 μm. The non-radiative mechanisms responsible for the quenching of the emission band have been identified. The exciton dynamics has been investigated using time resolved photoluminescence measurements. The results have been explained through the interplay between free excitons and localized states (arising from size fluctuations in the quantum wires).We want to acknowledge financial support from the Spanish MICINN through Grants: TEC 2005-05781-C03-03, S-0505-TIC-0191, TEC2008-06756-C03, Consolider-Ingenio 2010 QOIT (CSD2006-0019), and CAM S2009ESP-1503. The main author, J.C.-F., thanks also the Spanish MCI for his FPI grant BES-2006-12300.Peer Reviewe

Localization effects on recombination dynamics in InAs/InP self-assembled quantum wires emitting at 1.5 μm