Open AccessInvestigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes
Author(s) -
Mohamed Seghir Boucherit,
A. Soltani,
E. Monroy,
Michel Rousseau,
D. Deresmes,
Maxime Berthe,
Corentin Durand,
J.C. De Jaeger
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3659468
Subject(s) - quantum tunnelling , diode , sapphire , molecular beam epitaxy , optoelectronics , materials science , breakdown voltage , reproducibility , wide bandgap semiconductor , voltage , current (fluid) , peak current , contact resistance , epitaxy , chemistry , optics , nanotechnology , electrical engineering , layer (electronics) , electrode , physics , laser , chromatography , engineering , electrochemistry
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