Compensation effect in the rate of solid-phase epitaxial growth of Si1−xGex alloys | Zendy

Kyo Suh | Zendy; Hong H. Lee | Zendy

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Compensation effect in the rate of solid-phase epitaxial growth of Si1−xGex alloys

Author(s) -

Kyo Suh,

Hong H. Lee

Publication year - 1997

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.365230

Subject(s) - epitaxy , activation energy , logarithm , growth rate , compensation (psychology) , materials science , exponential growth , phase (matter) , condensed matter physics , thermodynamics , solid solution , chemistry , metallurgy , mathematics , physics , nanotechnology , mathematical analysis , psychology , geometry , organic chemistry , layer (electronics) , psychoanalysis

The compensation effect, well known in catalytic reactions, is shown to apply equally well to the solid-phase epitaxial (SPE) growth of Si1−xGex alloys. A linear relationship exists between the logarithm of the pre-exponential factor and the activation energy of the SPE growth rate. This linear relationship, together with the activation energy obtained earlier, enables one to completely describe the growth rate of Si1−xGex alloys. The effect holds for both strained and unstrained SPE. The model is applicable to other binary alloys.

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