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Auger recombination rates in ZnMgO from first principles
Author(s) -
Markus Heinemann,
Christian Heiliger
Publication year - 2011
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3651391
Subject(s) - wurtzite crystal structure , auger effect , recombination , auger , materials science , atomic physics , electron , wide bandgap semiconductor , auger electron spectroscopy , ab initio quantum chemistry methods , condensed matter physics , chemistry , optoelectronics , physics , zinc , metallurgy , nuclear physics , biochemistry , organic chemistry , molecule , gene
We investigate direct electron-electron-hole interband Auger recombination for wurtzite Zn1-xMgxO alloys in the range 0 ≤ x ≤ 1. Recombination rates are computed by interpolating the band structure and transition matrix elements from ab initio calculations of bulk ZnO, Zn0.5Mgn0.5O, and MgO primitive cells. We find that interband Auger recombination is most probable for Mg concentrations around 50%, where ZnMgO does not exist in a stable wurtzite phase. Since, for low Mg concentrations, the calculated Auger coefficients are far below 10−32 cm6/s, we do not expect significant nonradiative loss through direct interband recombination in wurtzite ZnMgO.

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