Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes | Zendy

Kieran J. Cheetham | Zendy; A. Krier | Zendy; I. P. Marko | Zendy; A. M. Aldukhayel | Zendy; Stephen J. Sweeney | Zendy

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Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

Author(s) -

Kieran J. Cheetham,

A. Krier,

I. P. Marko,

A. M. Aldukhayel,

Stephen J. Sweeney

Publication year - 2011

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3646910

Subject(s) - auger effect , electroluminescence , diode , optoelectronics , band gap , infrared , auger , materials science , hydrostatic pressure , light emitting diode , wide bandgap semiconductor , radiative transfer , spontaneous emission , atomic physics , optics , laser , physics , nanotechnology , layer (electronics) , thermodynamics

Mid-infrared light emitting diodes based on the pentanary alloy GaInAsSbP have been engineered to provide a favourable band structure for the suppression of non-radiative Auger recombination which is dominant in narrow band gap III-V materials. Hydrostatic pressure measurements at room temperature and at 100 K were used to tune the band gap towards resonance with the spin-orbit band gap. Analysis of the resulting electroluminescence confirms that the non-radiative Auger recombination process involving the spin-orbit-split-off-band is suppressed under ambient conditions

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