Reduced auger recombination in mid-infrared semiconductor lasers | Zendy

Robert Bedford | Zendy; Gregory Triplett | Zendy; D. H. Tomich | Zendy; S. W. Koch | Zendy; Jerome V. Moloney | Zendy; J. Hader | Zendy

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Reduced auger recombination in mid-infrared semiconductor lasers

Author(s) -

Robert Bedford,

Gregory Triplett,

D. H. Tomich,

S. W. Koch,

Jerome V. Moloney,

J. Hader

Publication year - 2011

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3646552

Subject(s) - auger , auger effect , laser , semiconductor laser theory , optoelectronics , semiconductor , quantum well , materials science , carrier lifetime , atomic physics , infrared , reduction (mathematics) , optics , physics , silicon , geometry , mathematics

A quantum-design approach to reduce the Auger losses in λ = 2 μm InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a ∼3 × reduction in the threshold, which results in 4.6 × lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 × and represents about a 19-fold reduction in the equivalent “Auger coefficient.”

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