Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy | Zendy

Dmitri O. Klenov | Zendy; Joshua M. O. Zide | Zendy

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Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy

Author(s) -

Dmitri O. Klenov,

Joshua M. O. Zide

Publication year - 2011

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3645632

Subject(s) - monolayer , epitaxy , spectroscopy , transmission electron microscopy , materials science , surface energy , electron energy loss spectroscopy , scanning transmission electron microscopy , crystallography , analytical chemistry (journal) , condensed matter physics , chemistry , layer (electronics) , nanotechnology , physics , quantum mechanics , chromatography , composite material

Final published versionThe structure of epitaxially grown InAlAs/InP interfaces was studied using atomically resolved x-ray energy dispersive spectroscopy in scanning transmission electron microscopy. As and P sublattices show sharp termination on the interface. The In sublattice is continuous across the interface. The study has shown the depletion of the Al concentration at the interface; at the last atomic columns of the InAlAs, In occupancy is close to 100%, while Al occupancy is almost zero. A monolayer of InAs at the interface is consistent with substitution of As for P at the surface preceding growth.University of Delaware. Department of Materials Science and Engineering

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