Open AccessUndoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
Author(s) -
Benjamin Vincent,
Federica Gencarelli,
H. Bender,
Clément Merckling,
Bastien Douhard,
Dirch Hjorth Petersen,
Ole Hansen,
Henrik H. Henrichsen,
Johan Meersschaut,
Wilfried Vandervorst,
Marc Heyns,
Roger Loo,
Matty Caymax
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3645620
Subject(s) - epitaxy , chemical vapor deposition , materials science , metastability , doping , in situ , atmospheric pressure , germanium , deposition (geology) , analytical chemistry (journal) , optoelectronics , nanotechnology , layer (electronics) , chemistry , silicon , environmental chemistry , geology , paleontology , organic chemistry , sediment , oceanography
In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sn contents up to 8%. Those metastable layers stay fully strained after 30 min anneal in N2 at 500 °C; Ge-Sn interdiffusion is seen at 500 °C but not at lower temperature. B is 100% active in the in-situ GeSn:B layers up to a concentration of 1.7 × 1019 cm−3. GeSn:B provides slightly lower Hall hole mobility values than in pure p-type Ge especially for low B concentrations.
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