Open AccessBehavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance
Author(s) -
T. Umeda,
Kazuki Esaki,
Ryoji Kosugi,
Kenji Fukuda,
Takeshi Ohshima,
N. Morishita,
Junichi Isoya
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3644156
Subject(s) - nitrogen , materials science , mosfet , resonance (particle physics) , metal , spectroscopy , semiconductor , field effect transistor , oxide , condensed matter physics , wide bandgap semiconductor , magnetic field , transistor , atomic physics , optoelectronics , chemistry , electrical engineering , voltage , physics , organic chemistry , quantum mechanics , metallurgy , engineering
The microscopic behavior of nitrogen atoms in the SiO2-SiC interface regions of n-channel lateral 4 H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) was studied using low-temperature electrically detected magnetic resonance spectroscopy and other techniques. The results show that nitrogen atoms eliminated shallow interface states observable at 20 K and further diffused into the channel region of the MOSFETs as shallow donors. These two behaviors enable nitrogen atoms to change the channel conductivity of SiC MOSFETs
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