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Intrinsic carrier concentration and electron effective mass in Hg1−xZnxTe
Author(s) -
YiGao Sha,
ChingHua Su,
S. L. Lehoczky
Publication year - 1997
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.364289
Subject(s) - effective mass (spring–mass system) , chemistry , electron , fermi level , electronic band structure , atomic physics , condensed matter physics , physics , quantum mechanics
The intrinsic carrier concentrations, Fermi energies, and the electron effective masses are calculated for Hg1−xZnxTe with 0

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