Investigation of photoluminescence and photocurrent in InGaAsP/InP strained multiple quantum well heterostructures | Zendy

O. Y. Raisky | Zendy; W. B. Wang | Zendy; R. R. Alfano | Zendy; C. L. Reynolds | Zendy; V. Swaminathan | Zendy

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Investigation of photoluminescence and photocurrent in InGaAsP/InP strained multiple quantum well heterostructures

Author(s) -

O. Y. Raisky,

W. B. Wang,

R. R. Alfano,

C. L. Reynolds,

V. Swaminathan

Publication year - 1997

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.364070

Subject(s) - photocurrent , photoluminescence , heterojunction , quantum well , optoelectronics , materials science , quantum efficiency , laser , chemistry , condensed matter physics , molecular physics , optics , physics

Multiple quantum well InGaAsP/InP p-i-n laser heterostructures with different barrier thicknesses have been investigated using photoluminescence (PL) and photocurrent (PC) measurements. The observed PL spectrum and peak positions are in good agreement with those obtained from transfer matrix calculations. Comparing the measured quantum well PC with calculated carrier escape rates, the photocurrent changes are found to be governed by the temperature dependence of the electron escape time.

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