Open AccessFirst principles study of the structural, electronic, and dielectric properties of amorphous HfO2
Author(s) -
Tsung-Ju Chen,
Chin-Lung Kuo
Publication year - 2011
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3636362
Subject(s) - amorphous solid , dielectric , density functional theory , vacancy defect , band gap , materials science , atom (system on chip) , coordination number , electronic structure , elementary charge , charge density , condensed matter physics , electron , molecular physics , computational chemistry , chemistry , ion , crystallography , physics , optoelectronics , computer science , embedded system , organic chemistry , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom