Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2 | Zendy

Thomas Löher | Zendy; Y. Tomm | Zendy; Andreas Klein | Zendy; Dong Su | Zendy; C. Pettenkofer | Zendy; Wolfram Jaegermann | Zendy

Open Access

Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2

Author(s) -

Thomas Löher,

Y. Tomm,

Andreas Klein,

Dong Su,

C. Pettenkofer,

Wolfram Jaegermann

Publication year - 1996

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.363624

Subject(s) - nucleation , semiconductor , cadmium telluride photovoltaics , molecular beam epitaxy , x ray photoelectron spectroscopy , materials science , substrate (aquarium) , crystallite , electron diffraction , thin film , faceting , transmission electron microscopy , crystallography , layer (electronics) , van der waals force , epitaxy , diffraction , optoelectronics , chemistry , nanotechnology , optics , chemical engineering , oceanography , organic chemistry , physics , molecule , geology , engineering

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