Open AccessInfluence of the semiconductor oxidation potential on the operational stability of organic field-effect transistors
Author(s) -
Archana Sharma,
Simon G. J. Mathijssen,
P. A. Bobbert,
D.M. de Leeuw
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3634066
Subject(s) - transistor , organic semiconductor , semiconductor , threshold voltage , relaxation (psychology) , field effect transistor , instability , materials science , exponential function , biasing , voltage , negative bias temperature instability , field (mathematics) , chemical physics , condensed matter physics , optoelectronics , chemistry , physics , quantum mechanics , mathematics , psychology , social psychology , mathematical analysis , pure mathematics
During prolonged application of a gate bias, organic field-effect transistors show a gradual shift of the threshold voltage towards the applied gate bias voltage. The shift follows a stretched-exponential time dependence governed by a relaxation time. Here, we show that a thermodynamic analysis reproduces the observed exponential dependence of the relaxation time on the oxidation potential of the semiconductor. The good fit with the experimental data validates the underlying assumptions. It demonstrates that this operational instability is a straightforward thermodynamically driven process that can only be eliminated by eliminating water from the transistor. © 2011 American Institute of Physics
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