Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors | Zendy

Henrik A. Nilsson | Zendy; Philippe Caroff | Zendy; Erik Lind | Zendy; MatsErik Pistol | Zendy; Claes Thelander | Zendy; LarsErik Wernersson | Zendy

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Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

Author(s) -

Henrik A. Nilsson,

Philippe Caroff,

Erik Lind,

MatsErik Pistol,

Claes Thelander,

LarsErik Wernersson

Publication year - 2011

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3633742

Subject(s) - heterojunction , nanowire , quantum tunnelling , optoelectronics , band gap , materials science , condensed matter physics , field effect transistor , band bending , transistor , impact ionization , voltage , chemistry , ionization , physics , quantum mechanics , ion , organic chemistry

In this paper, we discuss the electrical properties of InAs/InSb heterostructure field-effect transistors (HFETs) fabricated by nanowire technology. The nanowire technology enables the growth of non-lattice matched devices, such as InSb on InAs. 5,6 We use a lateral transistor configuration with transistors formed to the InAs/InSb segments. We consider the InAs/InSb field-effect transistor (FET) and discuss the main transport mechanisms, and the data are compared to n-type InAs and n-type InSb FETs. 7 We demonstrate unipolar n-type operation of the HFET and determine the height of the heterostructure junction. Furthermore, we show that the HFET may operate as a bipolar device based on hole transport in the InSb, with the possibility to observe bandto-band tunneling across the broken bandgap heterointerface.

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