Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon | Zendy

Fiacre Rougieux | Zendy; Bianca Lim | Zendy; Jan Schmidt | Zendy; Maxime Forster | Zendy; Daniel Macdonald | Zendy; A. Cuevas | Zendy

Open Access

Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

Author(s) -

Fiacre Rougieux,

Bianca Lim,

Jan Schmidt,

Maxime Forster,

Daniel Macdonald,

A. Cuevas

Publication year - 2011

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3633492

Subject(s) - boron , dopant , silicon , annealing (glass) , oxygen , doping , materials science , charge carrier density , analytical chemistry (journal) , chemistry , optoelectronics , metallurgy , organic chemistry , chromatography

In this study, we present experimental data regarding the concentration of the boron-oxygen complex in compensated n-type silicon when subjected to illumination. We find that the defect density is independent of the net dopant concentration and is strongly dependent on the minority carrier concentration during illumination. We show that annealing at temperatures in the range 500 C to 700 C permanently reduces the defect density possibly via a decrease in the oxygen dimer concentration. V C 2011 American Institute of Physics. [doi:10.1063/1.3633492]

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